Tunable reverse rectification of layed Janus MSeS (M = Hf, Zr) and SnS2 heterojunctions

Two-dimensional (2D) Janus transition metal dichalcogenides (JTMDs) exhibit suitable band gaps and strong visible light absorption, which are extensively applied to the field of optoelectronic devices. Here, we investigate electronic properties 2D JTMDs MSeS (M = Hf, Zr) SnS2 van der Waals heterojunction through density functional theory. The calculated reveal that ZrSeS/SnS2 has a type-I alignment, while HfSeS/SnS2 type-II alignment. We build diodes based on Zr)/SnS2 heterojunctions study transport. currents devices asymmetry, negative turn-on voltages suggest constructed backward diodes. Moreover, it is found gate voltage can modulate rectifying ratio, performance better than HfSeS/SnS2..